Sensitivity Analysis of Ge Source Double Gate TFET Under Heavy Ion Irradiation

The heavy-ion analysis of the device results in a single event transient (SET) pulse of drain current. This work includes the impact of heavy-ion radiation on Ge-Source Double gate TFET. Initially, ion strikes normally at the five different locations to achieve the most sensitive region in the device. Further, heavy-ion generation rate and collected charge are extracted for corresponding locations. These parameters are also calculated by modulating the angle of incidence 0°, 30°, 60°, and 90° at constant linear energy transfer (LET) of 20 MeV-cm2/mg. Moreover, similar analysis is carried out at various LET values and bipolar gain for a heavy ion strike in the channel region. Finally, transient current analysis of Ge source DG TFET is compared with published work for FETs.