All-optical broadband terahertz modulator based on CdS NWs/Si heterojunction and interface photoconductivity analysis

Abstract A high-performance, low-cost terahertz modulator is fabricated by spin-coating CdS nanowires onto silicon. This all-optical modulator achieves broadband modulation (0.4–1.6 THz) with a significant depth of 85% at a low power density (2 W cm −2 ), exceeding bare silicon by fourfold. THz-TDS confirms its terahertz amplitude modulation capability. Tests of the simple photonic switch further illustrate the modulator’s potential for carrying information on a terahertz transmission wave. The modulation mechanism is explained through energy band theory and photoconductivity data. This work also presents a novel method for probing heterostructure formation using THz-TDS with laser irradiation.

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Publication Details

Journal
Physica Scripta
Published
2024-09-27
DOI
https://doi.org/10.1088/1402-4896/ad80e2
Citations
6
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
1.25

Funders

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article

All-optical broadband terahertz modulator based on CdS NWs/Si heterojunction and interface photoconductivity analysis

Qing Han, Bing Jin, Ao Li, Xiaoxiao Li et al.
6 citations
Physica Scripta
Photonic and Optical Devices
1.25
article

All-optical broadband terahertz modulator based on CdS NWs/Si heterojunction and interface photoconductivity analysis

Qing Han, Bing Jin, Ao Li, Xiaoxiao Li, Pengfei Fang, Shuhan Li, Bumaliya Abulimiti, Minjie Zhou, Yue Tan, Fan Zhang, Zhiqiang Li, Lili Yan
article en
6 citations

Abstract

Abstract A high-performance, low-cost terahertz modulator is fabricated by spin-coating CdS nanowires onto silicon. This all-optical modulator achieves broadband modulation (0.4–1.6 THz) with a significant depth of 85% at a low power density (2 W cm −2 ), exceeding bare silicon by fourfold. THz-TDS confirms its terahertz amplitude modulation capability. Tests of the simple photonic switch further illustrate the modulator’s potential for carrying information on a terahertz transmission wave. The modulation mechanism is explained through energy band theory and photoconductivity data. This work also presents a novel method for probing heterostructure formation using THz-TDS with laser irradiation.

Physica ScriptaVol. 99(11)
Xinjiang Normal University (CN), Shandong University (CN), Wuhan University of Technology (CN), Institut des Sciences Moléculaires (FR), Henan Institute of Science and Technology (CN), Shandong University of Science and Technology (CN)
National Natural Science Foundation of China
Openalex Percentile: Top 20%
Photonic and Optical Devices
1.25
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All-optical broadband terahertz modulator based on CdS NWs/Si heterojunction and interface photoconductivity analysis — Qing Han, Bing Jin, et al. · Physica Scripta (2024) | TGRS Research Map | TGRS