Strained GeSn laser with multiple fins structure based on SiN stress

Abstract Integrated photonics technology is one of the key technologies driving the development of integrated circuits and sustaining Moore's Law. It achieves low-power, high-speed logical computation and data processing by integrating photonic and electronic devices on the same chip, thereby overcoming issues such as electromagnetic interference and transmission delays encountered by electronic chips during their development. Replacing III-V materials with IV group materials in silicon-based monolithic photonic integration chips can reduce the cost and process complexity of photonic integration chips. Among the IV group materials, germanium (Ge) stands out due to its unique bandgap structure, which can be engineered to achieve direct bandgap emission. This has important applications in the fabrication of efficient integrated light sources using IV group materials. In this paper, a strained GeSn laser with Multiple Fins structure based on SiN stress is proposed, and it exhibits a threshold current density of 180 kA/cm² and an emission peak wavelength at 2429 nm.