A SiC Trench Schottky Diode With Accelerated Hole Extraction and Recombination Structure for Enhancing Single-Event Burnout Tolerance

A SiC trench junction barrier Schottky diode with multiple P-shield layers and an embedded N+ region (MPNT-JBS) is proposed and investigated for enhancing single-event burnout (SEB) tolerance. The Schottky contact at the sidewall of the trench and the embedded N+ region in MPNT-JBS accelerate the extraction and recombination of holes. The mitigated accumulation of holes contributes to the reduction of the strong electric field near the metal/SiC interface, thus favoring a decrease in the high temperature. Under 50% of the rated voltage (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm { Cathode}}{=}600$ </tex-math></inline-formula> V), the maximum temperature near the metal/SiC interface in MPNT-JBS decreases by 78% and 71% compared to SiC JBS diode with multilayer N-buffer (MB-JBS), corresponding to the instances when heavy ions with a linear energy transfer (LET) value of 0.53 pC/<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula> m strike the middle of the Schottky contact and the P+ region, respectively. In addition, the multilayer P-shield of MPNT-JBS suppresses the peak temperature near the PN junction by enlarging the energy dissipation area and lowering the transient heat power near the PN junction. Compared to MB-JBS, the maximum temperature near the PN junction in MPNT-JBS decreases from 1890 K to 1454 K when heavy ions strike the middle of the P+ region (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm { Cathode}}{=}600$ </tex-math></inline-formula> V). These results indicate that MPNT-JBS provides potential for enhancing SEB tolerance.