Perspective on the spin field-effect transistor

Abstract The spin field effect transistor (sFET), proposed by Datta and Das (1990 Appl. Phys. Lett. 56 665–7), has long been regarded as a model semiconductor spintronic device, offering potential for new, more energy-efficient functionalities in electronic devices. Here, the overview is given how the pursuit of meeting the requirements for implementing the sFET concept has influenced spintronic research, leading to a greater understanding of spin phenomena in solids and resulting in numerous exciting effects. After looking back, based on the recent developments, the possible future directions of the sFET-related research are described.