Investigating the trade-off between BV stability and ESD robustness in the n-channel LDMOS devices

Abstract The trade-off between breakdown voltage (BV) stability and electrostatic discharge (ESD) robustness in n-channel laterally diffused metal–oxide–semiconductor (nLDMOS) devices was investigated, by utilizing computer-aided design Technology Computer Aided Design (TCAD) simulations and charge-pumping measurements. The BV stability and ESD robustness were improved by enlarging the key parameter Lj of the drift region, and introducing the step-graded doping drift region, respectively. The proposed novel nLDMOS device demonstrates superior performance, exhibiting an excellent ESD robustness of 2.0 A and a minimal 2% BV degradation after 50 000 s of hot carrier injection stress, representing a significant advancement in balancing ESD protection and long-term reliability.