Role of fluorine doping on the electron transport layer of F-doped TiO2 (Titanium dioxide) for photovoltaic systems and its environmental impact

Photovoltaic (PV) systems are regarded as clean and sustainable energy sources and exhibit minimal pollution during their lifetime. The production of hazardous contaminants contaminating water resources, emissions of air pollutants during the manufacturing process, and the impact of PV installations on land use are important environmental factors to consider. The present study aimed to synthesise the F-doped Titanium dioxide (TiO2) thin films on a glass substrate employing spin coating followed by the sol-gel process ETL application purpose. Fluorine-doped TiO2 thin films were prepared using the sol-gel spin coating technique. The X-ray diffraction (XRD) results confirmed that the most intense peak was observed at 25.37° corresponding to the crystallographic plane (101) for anatase TiO2. The average transparency of TiO2 was increased by adding the doping level of fluorine and increment in the optical bandgap. The thickness of the thin film was kept at about 300 nm. The resistance of nanocrystalline thin films of different F doped TiO2 was decreased from 1.322×1012 Ω, 9.728×1011 Ω, as the F doping concentration was increased from pristine to 7 at. %. Based on electrical measurements, it was observed that a suitable electron transport layer (ETL) of F-doped TiO2 can be synthesized for photovoltaic applications. The present study offers a synthesis and analysis of F-doped TiO2 that can be used to improve the sustainability of PV manufacturing processes, improve its economic value, and mitigate its negative impact on the environment.