Passively Q-switched Er,Yb:GdMgB<sub>5</sub>O<sub>10</sub> microchip laser with Cr:ZnS thin layer saturable absorber
Abstract We demonstrate continuous wave and passively Q-switched Er,Yb:GdMgB 5 O 10 microchip lasers emitting in the spectral range of 1.5–1.6 µ m. A maximal output power of 220 mW was obtained at 1568 nm at an absorbed pump power of 2.3 W with a slope efficiency of 18%. By using an MBE-grown Cr:ZnS thin layer as a saturable absorber laser pulse with a duration of 24 ns and an energy of 3 µ J at a repetition rate of 50 kHz were obtained at a wavelength of 1568 nm.
Authors
- Е. А. Волкова (ORCID: https://orcid.org/0000-0001-6117-6278)
- Е. В. Копорулина (ORCID: https://orcid.org/0000-0003-3715-679X)
- V. É. Kisel (ORCID: https://orcid.org/0000-0001-5217-2849)
- Н. В. Кулешов (ORCID: https://orcid.org/0000-0002-8219-785X)
- K. N. Gorbachenya
- V. V. Maltsev
Institutions
- A.V. Shubnikov Institute of Crystallography (RU)
- Belarusian National Technical University (BY)
Publication Details
- Journal
- Laser Physics Letters
- Published
- 2024-09-26
- DOI
- https://doi.org/10.1088/1612-202x/ad7c25
- Citations
- 3
- Primary Topic
- Solid State Laser Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.63