Quantum enhanced Josephson junction field-effect transistors for logic applications

• A new device structure of quantum enhanced JJFETs was proposed and demonstrated. • New JJFETs utilize sharp quantum phase transition of an excitonic insulator state. • New JJFETs are promising for low-energy, power-efficient microelectronics. Josephson junction field-effect transistors (JJFETs) have recently re-emerged as promising candidates for superconducting computing. For JJFETs to perform Boolean logic operations, the so-called gain factor α R must be larger than 1. In a conventional JJFET made with a classical channel material, due to a gradual dependence of superconducting critical current on the gate bias, α R is much smaller than 1. In this Letter, we propose a new device structure of quantum enhanced JJFETs in a zero-energy-gap InAs/GaSb heterostructure. We demonstrate that, due to an excitonic insulator quantum phase transition in this zero-gap heterostructure, the superconducting critical current displays a sharp transition as a function of gate bias, and the deduced gain factor α R ∼ 0.06 is more than 50 times that (∼0.001) reported in a classical JJFET. Further optimization may allow achieving a gain factor larger than 1 for logic applications.