The influence of ultrafast laser processing on morphology and optical properties of Au-GaAs composite structure

The results of direct femtosecond laser structuring of GaAs wafer coated with continuous semitransparent gold (Au) film are presented. The obtained structures demonstrate a combination of different features, namely laser-induced periodic surface structures (LIPSS) on semiconductor and metal film, nanoparticles, Au islands, and fragments of exfoliated Au film. The properties of Au-GaAs samples are studied with scanning electron microscopy (SEM), Raman scattering, and photoluminescence (PL) spectroscopy. The behaviour of phonon modes and enhancement of band-edge PL of Au-GaAs composite sample are discussed. The Raman spectra of Au-GaAs sample processed at different levels of irradiation pulse energy reveal forbidden TO and allowed LO phonon modes for selected geometry of experiment, as well as the manifestation of GaAs surface oxidation and amorphization. A 12-fold increase of PL intensity for Au-GaAs sample with LIPSS compared to initial GaAs surface is observed. The detected PL enhancement is caused by an increase of absorption in GaAs due to the light field enhancement near the Au nanoislands and a decrease of nonradiative surface recombination. The blue shift of PL band is caused by the quantum size effect in GaAs nano-sized features at laser processed surface. The combination of GaAs substrate with surface micro- and nanostructures with Au nanoparticles can be useful for photovoltaic and sensorics applications.

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Publication Details

Journal
Semiconductor Physics Quantum Electronics & Optoelectronics
Published
2024-09-20
DOI
https://doi.org/10.15407/spqeo27.03.261
Citations
1
Primary Topic
Laser Material Processing Techniques
Type
article
Field-Weighted Citation Impact
0.37
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article

The influence of ultrafast laser processing on morphology and optical properties of Au-GaAs composite structure

Nataliya Berezovska, Yevhen Hrabovskyi, Iryna Pundyk, V. R. Romanyuk et al.
1 citations
Semiconductor Physics Quantum Electronics & Optoelectronics
Laser Material Processing Techniques
0.37
article

The influence of ultrafast laser processing on morphology and optical properties of Au-GaAs composite structure

Nataliya Berezovska, Yevhen Hrabovskyi, Iryna Pundyk, V. R. Romanyuk, S.V. Mamykin, Andriy Dmytruk, Igor Dmytruk
article en
1 citations

Abstract

The results of direct femtosecond laser structuring of GaAs wafer coated with continuous semitransparent gold (Au) film are presented. The obtained structures demonstrate a combination of different features, namely laser-induced periodic surface structures (LIPSS) on semiconductor and metal film, nanoparticles, Au islands, and fragments of exfoliated Au film. The properties of Au-GaAs samples are studied with scanning electron microscopy (SEM), Raman scattering, and photoluminescence (PL) spectroscopy. The behaviour of phonon modes and enhancement of band-edge PL of Au-GaAs composite sample are discussed. The Raman spectra of Au-GaAs sample processed at different levels of irradiation pulse energy reveal forbidden TO and allowed LO phonon modes for selected geometry of experiment, as well as the manifestation of GaAs surface oxidation and amorphization. A 12-fold increase of PL intensity for Au-GaAs sample with LIPSS compared to initial GaAs surface is observed. The detected PL enhancement is caused by an increase of absorption in GaAs due to the light field enhancement near the Au nanoislands and a decrease of nonradiative surface recombination. The blue shift of PL band is caused by the quantum size effect in GaAs nano-sized features at laser processed surface. The combination of GaAs substrate with surface micro- and nanostructures with Au nanoparticles can be useful for photovoltaic and sensorics applications.

Semiconductor Physics Quantum Electronics & OptoelectronicsVol. 27(03)
Openalex Percentile: Top 43%
Laser Material Processing Techniques
0.37
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