Analysis of the transformation of radiative recombination spectra of n-GaN after magnetic field treatments based on the queueing theories concept

Long-term changes in radiative recombination spectra of n-GaN after magnetic field treatments have been studied. It has been found out that the intensity of the radiation of donor-acceptor pairs remains unchanged over time, while the intensity of edge photoluminescence significantly decreases. These features have been explained by assuming the formation of additional donor levels and using the concepts of the queueing theory of donor-acceptor recombination.

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Publication Details

Journal
Semiconductor Physics Quantum Electronics & Optoelectronics
Published
2024-09-20
DOI
https://doi.org/10.15407/spqeo27.03.269
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.31
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article

Analysis of the transformation of radiative recombination spectra of n-GaN after magnetic field treatments based on the queueing theories concept

R.A. Redko, G.V. Milenin
1 citations
Semiconductor Physics Quantum Electronics & Optoelectronics
GaN-based semiconductor devices and materials
0.31
article

Analysis of the transformation of radiative recombination spectra of n-GaN after magnetic field treatments based on the queueing theories concept

R.A. Redko, G.V. Milenin
article en
1 citations

Abstract

Long-term changes in radiative recombination spectra of n-GaN after magnetic field treatments have been studied. It has been found out that the intensity of the radiation of donor-acceptor pairs remains unchanged over time, while the intensity of edge photoluminescence significantly decreases. These features have been explained by assuming the formation of additional donor levels and using the concepts of the queueing theory of donor-acceptor recombination.

Semiconductor Physics Quantum Electronics & OptoelectronicsVol. 27(03)
Openalex Percentile: Top 43%
GaN-based semiconductor devices and materials
0.31
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