The Effects of Al<sub>2</sub>O<sub>3</sub> Interlayer on the Ferroelectric Behavior of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Film for E-mode Ferroelectric Charge Trap Gate GaN HEMT
This research primarily investigates the impact of adding an aluminum oxide (Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>) interlayer between titanium nitride (TiN) capping layers on the ferroelectric properties of hafnium zirconium oxide (Hf<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf>.5Zr<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>) thin films. Through ferroelectric hysteresis measurements, PUND measurements, XRD analysis, and TEM analysis, the influence of the Al<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> interlayer on the ferroelectric properties and crystalline characteristics of Hf<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf>Zr<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> is observed and examined.
Authors
- Edward Yi Chang (ORCID: https://orcid.org/0000-0003-1616-5240)
- Tsung-Ying Yang (ORCID: https://orcid.org/0000-0001-5875-3011)
- Jui-Sheng Wu (ORCID: https://orcid.org/0000-0002-5358-5984)
- You‐Chen Weng (ORCID: https://orcid.org/0000-0003-3298-414X)
- Chih-Yi Yang
- Yi-Hsiang Wei
- Yu-Tung Du
Institutions
- National Yang Ming Chiao Tung University (TW)
Publication Details
- Published
- 2024-08-19
- DOI
- https://doi.org/10.1109/icse62991.2024.10681347
- Citations
- 2
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.42