Low Noise with High Linearity AlGaN/GaN HEMT Using Γ-Shaped Gate for Ka-Band Applications

In this study, AlGaN/GaN high-electron mobility transistors (HEMT) with Γ-shaped gate structure was developed and analyzed for Ka-band application. Under the frequency of 28 GHz, the proposed device exhibits great minimum noise figure (NF<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">min</inf>) of 1.51 dB, which can be attributed to the enlarged cross-sectional area caused by Γ-shaped gate structure. Besides, a high third order intercept point (OIP3) value of 35.8 dBm is achieved, which is resulting from the field plate structure of the Γ-shaped gate. The results prove that the AlGaN/GaN HEMT with Γ-shaped gate structure is capable of having great microwave noise performance and high linearity for Ka-band applications.