Investigation of TID effects on electrical characteristics of GaN MIS-HEMT with LPCVD-grown SiN passivation

This study examines the impact of total ionizing dose (TID) effects on GaN on Si metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for power applications, with a focus on the impact of the SiN passivation layer grown by low-pressure chemical vapor deposition (LPCVD). Devices featuring the LPCVD SiN passivation were subjected to various Co<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">60</sup> γ-ray irradiation doses (100 krad, 400 krad, 1 Mrad and 5 Mrad) under a grounded bias condition. The devices' characteristics were evaluated, including the drain leakage current (I<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D, leakage</inf>), the threshold voltage (V<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf>) shift, the on-resistance (R<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>), and the dynamic on-resistance (dyR<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf>) before and after irradiation. This study provides insights into the performance and reliability of GaN-based power devices with LPCVD-grown passivation under ionizing radiation.