Optimizing Methylammonium Tin Iodide-based Perovskite Solar Cells with Different Hole Transport Materials

Perovskite materials have garnered significant attention in the field of solar cell applications due to their highly promising performance. However, the utilization of lead (Pb) as the primary material in perovskite solar cells has been associated to health and environmental hazards. Consequently an alternative material for lead is necessary in order to develop environmentally friendly and high-efficiency solar cells. The reported efficiency value still necessitates further enhancement, indicating that the development of lead-free solar cells requires improvement. Methylammonium tin iodide (MaSnI<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>), a lead-free perovskite compound, can be utilized as a substitute for lead halide-based solar cells. This substitution is possible since MaSnI<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> is stable, non-toxic, and has a high efficiency. The simulation was conducted by the Solar Cell Capacitance Simulator (SCAPS-1D), employing the AM 1.5G spectrum. The primary objective of this research is to enhance the performance of the hole transport layer materials in order to achieve a high power conversion efficiency (PCE) using MaSnI<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> material. Organic and inorganic HTL such as CuSBS, PEDOT:PSS+WO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>, Spiro-OMeTAD, P3HT, NiO, Cul, SrCu<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> and PTAA are required in our simulations. These materials were selected to explore their potential in optimizing device performance due to their distinct properties, such as conductivity, stability, and compatibility with MaSnI3. Regarding HTM performance for device construction, our modelling results indicate that the 100 nm CuSBS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> layer works better. We have found that by using the configuration of ITO/TIO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/MASnI<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>/CuSBS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/Au, a PCE of 27.67% with a Voc of 0.97 V can be achieved.