Effects of Growth Parameters on the Morphology of ReS<sub>2</sub> Nanoflakes Prepared by Chemical Vapor Deposition

The development of efficient ReS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-based optoelectronic devices depends on the ability to synthesize high-quality nanoflakes with the desired morphology. In this work, we report the synthesis of ReS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> nanoflakes with vertical and horizontal orientations via chemical vapor deposition (CVD) on SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/Si substrates at atmospheric pressure. The ReS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> samples were grown using rhenium trioxide (ReO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>) and sulfur precursors. It was found that growth temperature and ReO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>-substrate distance significantly influenced the nucleation density and morphology of the ReS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> flakes, as observed by optical and field-emission scanning electron microscope images. High Re vapor environment favors the formation of vertical flakes. The growth then switches to a mixture of both vertical and horizontal flakes as the Re concentration decreases. Raman spectroscopy data show the characteristic Eg and Cp vibrational modes which belong to the ReS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>. The full-width-at-half-maximum of the 210.3 cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> peak is 8 cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> which is comparable to the high-quality ReS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> flakes prepared by mechanical exfoliation. This work provides valuable insights on the effect of CVD parameters on the growth and morphology of ReS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> nanoflakes.

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Published
2024-08-19
DOI
https://doi.org/10.1109/icse62991.2024.10681368
Primary Topic
Chalcogenide Semiconductor Thin Films
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article

Effects of Growth Parameters on the Morphology of ReS2 Nanoflakes Prepared by Chemical Vapor Deposition

Muhammad Hilmi Johari, Abdul Rahman Mohmad, P. Susthitha Menon, Muhammad Faris Musawwi Ruslan et al.
Chalcogenide Semiconductor Thin Films
article

Effects of Growth Parameters on the Morphology of ReS2 Nanoflakes Prepared by Chemical Vapor Deposition

Muhammad Hilmi Johari, Abdul Rahman Mohmad, P. Susthitha Menon, Muhammad Faris Musawwi Ruslan, Syahira A. Hinayadullah
article en

Abstract

The development of efficient ReS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>-based optoelectronic devices depends on the ability to synthesize high-quality nanoflakes with the desired morphology. In this work, we report the synthesis of ReS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> nanoflakes with vertical and horizontal orientations via chemical vapor deposition (CVD) on SiO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>/Si substrates at atmospheric pressure. The ReS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> samples were grown using rhenium trioxide (ReO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>) and sulfur precursors. It was found that growth temperature and ReO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>-substrate distance significantly influenced the nucleation density and morphology of the ReS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> flakes, as observed by optical and field-emission scanning electron microscope images. High Re vapor environment favors the formation of vertical flakes. The growth then switches to a mixture of both vertical and horizontal flakes as the Re concentration decreases. Raman spectroscopy data show the characteristic Eg and Cp vibrational modes which belong to the ReS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>. The full-width-at-half-maximum of the 210.3 cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> peak is 8 cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> which is comparable to the high-quality ReS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> flakes prepared by mechanical exfoliation. This work provides valuable insights on the effect of CVD parameters on the growth and morphology of ReS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> nanoflakes.

National University of Malaysia (MY)
Openalex Percentile: Top 86%
Chalcogenide Semiconductor Thin Films
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