On-chip electro-optical spiking VO <sub>2</sub> /Si device with an inhibitory leaky integrate-and-fire response

Integrated photonic neuromorphic computing has emerged as an appealing technology to replicate human brain functionalities by leveraging the benefits of integrated photonics. In this context, spiking neural networks (SNNs) offer a highly energy-efficient artificial neural network due to the event-based information processing. In this work, we propose an electro-optical spiking device for the silicon photonics platform based on a VO 2 /Si waveguide and a meander-shaped microheater. A leaky integrate-and-fire (LIF) response with inhibitory optical spiking is achieved by harnessing the temperature-driven insulator-metal transition (IMT) of VO 2 combined with thermal dynamics. Hence, our proposal would not require complex electronic circuitry bottlenecking the neural network. Our numerical simulations demonstrate firing upon milliwatt and nanosecond range postsynaptic pulses and adjustable spike characteristics in the time domain with sub-microsecond values. Therefore, our spiking device could enable scalable and energy-efficient photonic-based SNNs.

Authors

Publication Details

Journal
Optical Materials Express
Published
2024-09-16
DOI
https://doi.org/10.1364/ome.537717
Citations
2
Primary Topic
Transition Metal Oxide Nanomaterials
Type
article
Field-Weighted Citation Impact
0.34

Funders

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article

On-chip electro-optical spiking VO 2 /Si device with an inhibitory leaky integrate-and-fire response

Pablo Sanchis, Jorge O. Parra, Juan Morcillo
2 citations
Optical Materials Express
Transition Metal Oxide Nanomaterials
0.34
article

On-chip electro-optical spiking VO 2 /Si device with an inhibitory leaky integrate-and-fire response

Pablo Sanchis, Jorge O. Parra, Juan Morcillo
article en
2 citations

Abstract

Integrated photonic neuromorphic computing has emerged as an appealing technology to replicate human brain functionalities by leveraging the benefits of integrated photonics. In this context, spiking neural networks (SNNs) offer a highly energy-efficient artificial neural network due to the event-based information processing. In this work, we propose an electro-optical spiking device for the silicon photonics platform based on a VO 2 /Si waveguide and a meander-shaped microheater. A leaky integrate-and-fire (LIF) response with inhibitory optical spiking is achieved by harnessing the temperature-driven insulator-metal transition (IMT) of VO 2 combined with thermal dynamics. Hence, our proposal would not require complex electronic circuitry bottlenecking the neural network. Our numerical simulations demonstrate firing upon milliwatt and nanosecond range postsynaptic pulses and adjustable spike characteristics in the time domain with sub-microsecond values. Therefore, our spiking device could enable scalable and energy-efficient photonic-based SNNs.

Optical Materials ExpressVol. 14(11)
Universitat Politècnica de València, Agencia Estatal de Investigación
Affordable and clean energy
Openalex Percentile: Top 50%
Transition Metal Oxide Nanomaterials
0.34
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On-chip electro-optical spiking VO <sub>2</sub> /Si device with an inhibitory leaky integrate-and-fire response — Pablo Sanchis, Jorge O. Parra, et al. · Optical Materials Express (2024) | TGRS Research Map | TGRS