Temporary changes in current flow mechanisms in erbium-doped porous silicon

The paper discusses the basic mechanisms of conductivity in silicon MIS structures. The object of the study is porous silicon doped with an erbium impurity of an aqueous solution of erbium nitrate Er(NO3)3 • 5H2O by temperature annealing in a diffusion furnace at a temperature of 800°C for 1 hour. Comparative characteristics of the current-voltage and capacitance-voltage dependences are presented, describing the regular changes in the mechanisms of current flow and charge capture in the samples under study. The results of the work qualitatively and quantitatively describe the temporary change in the electrical characteristics of porous silicon, which can be taken into account by technologists for better understanding the mechanisms of current transfer in luminescent structures of porous silicon with erbium ions, as well as in the study and manufacture of light-emitting diodes based on it.