Generalized Analytical Modeling for Switching Loss Estimation of SiC MOSFET at Wide Operating Range

In the present era, the most significant goal for any power engineer is to enhance the system efficiency while operating at higher switching frequency and high power ratings. Wide band gap devices (such as SiC and GaN) plays crucial role in reduction of semiconductor losses and enhancement in power handling capability of power converter. However, precise estimation of switching and conduction losses in semiconductor devices is critical and challenging. The conventional techniques for loss calculation involves double pulse test (DPT) and calorimetric test (CT) provides good accuracy but it requires a dedicated test setup. Implementing a test environment for loss estimation is a practically insignificant and unfeasible option. This paper proposes a generalized algorithm for developing a simple analytical loss estimation model by using device datasheet information. The proposed model has capability to accurately and quickly estimate switching losses for wider range of operating voltage and current. This article also explains an excellent strategy for extracting parameters from datasheets by curve fitting. To verify the proposed model, DPT is performed on SiC based half bridge inverter.