GaN Device Modelling Using Machine Learning Approach for Power Electronic Converters

This paper introduces a deep learning-based approach for modelling various GaN -based power electronic devices, crucial for designing and simulating diverse power electronic circuits and conducting performance analysis. The deep learning model is trained using different voltage, current levels, gate resistances, and parasitic inductances. The training dataset is obtained by simulating a realistic Double Pulse Test (DPT) circuit, considering parasitic elements. A many to many Long Short-Term Memory based deep learning model is designed to effectively capture complex switching behavior of GaN devices. This model enables efficient analysis of switching voltage and current, along with reliability assessment of GaN-based power converters. The accuracy of the proposed model is verified by comparing the LTspice simulation results.

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Publication Details

Published
2024-08-04
DOI
https://doi.org/10.1109/intelec60315.2024.10678978
Primary Topic
Induction Heating and Inverter Technology
Type
article
Field-Weighted Citation Impact
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article

GaN Device Modelling Using Machine Learning Approach for Power Electronic Converters

Souvik Saha, Moumita Das, Priyabrata Mondal
Induction Heating and Inverter Technology
article

GaN Device Modelling Using Machine Learning Approach for Power Electronic Converters

Souvik Saha, Moumita Das, Priyabrata Mondal
article en

Abstract

This paper introduces a deep learning-based approach for modelling various GaN -based power electronic devices, crucial for designing and simulating diverse power electronic circuits and conducting performance analysis. The deep learning model is trained using different voltage, current levels, gate resistances, and parasitic inductances. The training dataset is obtained by simulating a realistic Double Pulse Test (DPT) circuit, considering parasitic elements. A many to many Long Short-Term Memory based deep learning model is designed to effectively capture complex switching behavior of GaN devices. This model enables efficient analysis of switching voltage and current, along with reliability assessment of GaN-based power converters. The accuracy of the proposed model is verified by comparing the LTspice simulation results.

Indian Institute of Technology Mandi (IN)
Affordable and clean energy
Openalex Percentile: Top 84%
Induction Heating and Inverter Technology
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