Heterostructure WSe2/copper hexadecafluorophthalocyanine (F16CuPc) field-effect transistors for efficient suppression of electron transport

The use of the organic semiconductor copper hexadecafluorophthalocyanine (F16CuPc) in WSe2 based heterostructure field-effect transistors (FETs) is shown to result in a large reduction in electron current while not significantly impacting the hole current. This approach is promising for use in p-channel FETs in which electron transport is undesirable and increases leakage currents and power dissipation in the off-state. The reduction in on-state electron currents, by up to three orders of magnitude, is due to the transfer of electrons to the low-mobility states in F16CuPc due to the greater electron affinity of the organic semiconductor compared to WSe2. The off-state currents under a drain bias are reduced by more than four orders of magnitude due to the effective suppression of electron currents. This is a result of the formation of type II heterostructure between F16CuPc and WSe2. Electrons in this heterostructure FET will preferentially transfer to F16CuPc, while holes will tend to remain in the high mobility WSe2 layer. This effect is more marked in monolayer WSe2 based FETs compared to multilayer WSe2 FETs due to a larger difference in electron affinities with respect to F16CuPc. Also, the magnitude of electron current suppression was further enhanced when F16CuPc is deposited only on a part of the channel near the source of WSe2 +F16CuPc FETs.