Effect of ground-state charge transfer on photoexcited charge transfer in transition metal dichalcogenide heterostructures

We report an experimental investigation on the effect of ground-state charge transfer and its induced electric field on photoexcited charge transfer in van der Waals heterostructures. Two heterostructure samples were fabricated by stacking an undoped WSe2 monolayer with either a Nb-doped or undoped MoSe2 monolayer. While no ground-state charge transfer is expected in the MoSe2/WSe2 heterostructure, the doped holes in the MoSe2:Nb/WSe2 heterostructure can transfer to WSe2, creating a space-charge electric field. By comparing the photoluminescence and time-resolved differential reflectance of the two heterostructures, we find that photoexcited hole transfer from MoSe2 to WSe2 is largely blocked by this field, whereas photoexcited electron transfer from WSe2 to MoSe2 is less affected. These results provide insight into the impact of doping on the charge-transfer performance of van der Waals heterostructures.

Authors

Institutions

Publication Details

Journal
Applied Physics Letters
Published
2024-09-16
DOI
https://doi.org/10.1063/5.0230792
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Effect of ground-state charge transfer on photoexcited charge transfer in transition metal dichalcogenide heterostructures

Kun Zhao, Fangying Ren, Hui Zhao, Ting Zheng et al.
Applied Physics Letters
2D Materials and Applications
article

Effect of ground-state charge transfer on photoexcited charge transfer in transition metal dichalcogenide heterostructures

Kun Zhao, Fangying Ren, Hui Zhao, Ting Zheng, Jiarong Wang, Jiaqi He, Xiaojing Liu, Yongsheng Wang, Xiaoxian Zhang, Guili Li, Dawei He
article en

Abstract

We report an experimental investigation on the effect of ground-state charge transfer and its induced electric field on photoexcited charge transfer in van der Waals heterostructures. Two heterostructure samples were fabricated by stacking an undoped WSe2 monolayer with either a Nb-doped or undoped MoSe2 monolayer. While no ground-state charge transfer is expected in the MoSe2/WSe2 heterostructure, the doped holes in the MoSe2:Nb/WSe2 heterostructure can transfer to WSe2, creating a space-charge electric field. By comparing the photoluminescence and time-resolved differential reflectance of the two heterostructures, we find that photoexcited hole transfer from MoSe2 to WSe2 is largely blocked by this field, whereas photoexcited electron transfer from WSe2 to MoSe2 is less affected. These results provide insight into the impact of doping on the charge-transfer performance of van der Waals heterostructures.

Applied Physics LettersVol. 125(12)
University of Kansas (US), Beijing Jiaotong University (CN), Beijing University of Chemical Technology (CN)
U.S. Department of Energy, National Natural Science Foundation of China, Natural Science Foundation of Beijing Municipality, National Key Research and Development Program of China
Openalex Percentile: Top 90%
2D Materials and Applications
DOIOpen Access PDFOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.