Determining the oxidation stability of SnSe under atmospheric exposure

Abstract Understanding surface stability becomes critical as 2D materials like SnSe are developed for piezoelectric and optical applications. SnSe thin films deposited by molecular beam epitaxy showed no structural changes after a two-year exposure to atmosphere, as confirmed by X-ray diffraction and Raman spectroscopy. X-ray photoelectron spectroscopy and reflectivity show a stable 3.5 nm surface oxide layer, indicating a self-arresting oxidative process. Resistivity measurements show an electrical response dominated by SnSe post-exposure. This work shows that SnSe films can be used in ambient conditions with minimal risk of long-term degradation, which is critical for the development of piezoelectric or photovoltaic devices. Graphical Abstract

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Publication Details

Journal
MRS Communications
Published
2024-09-19
DOI
https://doi.org/10.1557/s43579-024-00630-8
Citations
5
Primary Topic
2D Materials and Applications
Type
article
Field-Weighted Citation Impact
0.59

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article

Determining the oxidation stability of SnSe under atmospheric exposure

Marshall B. Frye, B. Gardner, Matthew Todd McDowell, Jeffrey R. Shallenberger et al.
5 citations
MRS Communications
2D Materials and Applications
0.59
article

Determining the oxidation stability of SnSe under atmospheric exposure

Marshall B. Frye, B. Gardner, Matthew Todd McDowell, Jeffrey R. Shallenberger, Derrick S-H. Liu, Stephanie Law, Lauren M. Garten, Maria Hilse, J Chin, Sebastian A. Marini
article en
5 citations

Abstract

Abstract Understanding surface stability becomes critical as 2D materials like SnSe are developed for piezoelectric and optical applications. SnSe thin films deposited by molecular beam epitaxy showed no structural changes after a two-year exposure to atmosphere, as confirmed by X-ray diffraction and Raman spectroscopy. X-ray photoelectron spectroscopy and reflectivity show a stable 3.5 nm surface oxide layer, indicating a self-arresting oxidative process. Resistivity measurements show an electrical response dominated by SnSe post-exposure. This work shows that SnSe films can be used in ambient conditions with minimal risk of long-term degradation, which is critical for the development of piezoelectric or photovoltaic devices. Graphical Abstract

MRS CommunicationsVol. 14(5)
Georgia Institute of Technology (US), Pennsylvania State University (US), Cornell University (US)
National Science Foundation, Pennsylvania State University, Office of Science, Office of Naval Research, Division of Materials Research, Division of Electrical, Communications and Cyber Systems, Air Force Office of Scientific Research, Office of Naval Research Global
Openalex Percentile: Top 33%
2D Materials and Applications
0.59
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Determining the oxidation stability of SnSe under atmospheric exposure — Marshall B. Frye, B. Gardner, et al. · MRS Communications (2024) | TGRS Research Map | TGRS