Fröhlich Scattering Effects on Electron Mobility in <i>β</i>‐Ga<sub>2</sub>O<sub>3</sub> Power Devices under High Temperature
The impact of Fröhlich scattering on β ‐Ga 2 O 3 Schottky barrier diodes (SBDs) electron mobility, particularly at high temperatures, is investigated. This scattering is crucial due to electron–polar optical phonon interactions. Temperature‐dependent I – V characteristics of a β ‐Ga 2 O 3 SBD from 300 to 473 K showed significant current reduction due to electron–polar optical phonon scattering, supported by correlation with mobility profiles. Additionally, in situ temperature‐dependent XPS analysis revealed a notable positive shift in core‐level binding energy, attributed to heightened electron–phonon interactions. This study provides crucial insights into carrier transport mechanisms, essential for power device design and operation.
Authors
- Yunlong He
- Hao Zhang (ORCID: https://orcid.org/0000-0003-1689-8532)
- Yuehua Hong (ORCID: https://orcid.org/0000-0002-2067-2168)
- Tian Zhu (ORCID: https://orcid.org/0000-0002-6901-4668)
- Xuefeng Zheng (ORCID: https://orcid.org/0000-0002-9410-3849)
- Xiaohua Ma (ORCID: https://orcid.org/0000-0002-1667-6342)
- Weidong Zhang (ORCID: https://orcid.org/0000-0002-7384-2490)
- Yue Hao (ORCID: https://orcid.org/0000-0002-8081-2919)
- Jianfu Zhang
Institutions
- Xidian University (CN)
- Liverpool John Moores University (GB)
Publication Details
- Journal
- physica status solidi (b)
- Published
- 2024-09-16
- DOI
- https://doi.org/10.1002/pssb.202400207
- Citations
- 1
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.12
Funders
- National Natural Science Foundation of China