Fabrication of one‐dimensional Zn‐doped Bi<sub>2</sub>S<sub>3</sub> nanorods for photodiode applications

In this research, the impact of the different zinc (Zn) concentrations on the physical and optoelectronic properties of Bi<sub>2</sub>S<sub>3</sub> nanorods as self-powered and photodiode applications was investigated. The performance of P-N junction photodiodes has been for decades since they are crucial in energy applications. The structure, degree of crystallinity, and shape of Zn-doped Bi<sub>2</sub>S<sub>3</sub> nanorods of various doping percentages formed onto the indium tin oxide (ITO) substrates by the dip coating technique are investigated using X-ray powder diffraction (XRD) and SEM. With increasing illumination time, the current-voltage (I-V) graphs demonstrate a rise in photocurrent. The diode's idealist factor was estimated using the I-V technique under 30 min of light illumination.

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Publication Details

Journal
Luminescence
Published
2024-09-01
DOI
https://doi.org/10.1002/bio.4901
Citations
10
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
2.09

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Fabrication of one‐dimensional Zn‐doped Bi2S3 nanorods for photodiode applications

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Fabrication of one‐dimensional Zn‐doped Bi2S3 nanorods for photodiode applications

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article en
10 citations

Abstract

In this research, the impact of the different zinc (Zn) concentrations on the physical and optoelectronic properties of Bi<sub>2</sub>S<sub>3</sub> nanorods as self-powered and photodiode applications was investigated. The performance of P-N junction photodiodes has been for decades since they are crucial in energy applications. The structure, degree of crystallinity, and shape of Zn-doped Bi<sub>2</sub>S<sub>3</sub> nanorods of various doping percentages formed onto the indium tin oxide (ITO) substrates by the dip coating technique are investigated using X-ray powder diffraction (XRD) and SEM. With increasing illumination time, the current-voltage (I-V) graphs demonstrate a rise in photocurrent. The diode's idealist factor was estimated using the I-V technique under 30 min of light illumination.

LuminescenceVol. 39(9)
Thiruvalluvar University (IN), Vel Tech Rangarajan Dr. Sagunthala R&D Institute of Science and Technology (IN), King Saud University (SA), Kyung Hee University (KR), St. Joseph's Institute of Technology (IN), Sacred Heart College (IN), St. Joseph’s College of Engineering (IN), Saveetha University (IN)
King Saud University
Affordable and clean energy
Openalex Percentile: Top 12%
Chalcogenide Semiconductor Thin Films
2.09
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