Research on single event effect of silicon carbide diode induced by Californium source

The single event effect of 650 V silicon carbide diode induced by Californium source was studied. The leakage current of silicon carbide diodes irradiated under 300 V and 350 V bias voltages increased continuously, and when the cumulative irradiation fluence reaching 3 × 10⁴ n·cm^-2, the reverse leakage current of silicon carbide diodes under the two bias voltages differed by two orders of magnitude. Under the bias voltages of 370 V and 400 V, silicon carbide diodes suffered single event burnout, and the cumulative irradiation fluence that occurred single event burnout was related to the bias voltage of silicon carbide diode. The electrical characteristics test results show that the breakdown voltage of silicon carbide diodes with continuous increase of leakage current is degraded to varying degrees, and it still retains part of the breakdown characteristics, while the device with single event burnout completely loses the breakdown characteristics. The micro damage analysis results show that the single event burnout leads to the destruction of the anode contact of silicon carbide diode, which affects the turn-on and breakdown characteristics.