A 28/56 Gb/s NRZ/PAM-4 Dual-Mode Transmitter with Eye-Opening Enhancement in 28 nm CMOS

This paper presents a non-return-to-zero (NRZ)/4-level pulse amplitude modulation (PAM-4) dual-mode wireline transmitter with an eye-opening enhancement technique to improve horizontal eye-opening. With the eye-enhancement pulse generator and the auxiliary pull-up device in the tail-less current-mode driver, the worst-case horizontal eye-opening increased by 30% in the PAM-4 eye diagram. The power efficiency of the NRZ mode was also improved by completely turning off the LSB path in the differential data path, resulting in only a 31% power efficiency degradation, which is far lower than that of the prior dual-mode transmitters. Fabricated in 28 nm CMOS, the transmitter achieves power efficiency of 1.4 pJ/bit at 56 Gb/s in PAM-4 mode and 1.84 pJ/bit at 28 Gb/s in NRZ mode, respectively.

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Publication Details

Journal
Electronics
Published
2024-09-23
DOI
https://doi.org/10.3390/electronics13183774
Primary Topic
Advancements in PLL and VCO Technologies
Type
article
Field-Weighted Citation Impact
0.00

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article

A 28/56 Gb/s NRZ/PAM-4 Dual-Mode Transmitter with Eye-Opening Enhancement in 28 nm CMOS

Jintae Kim, Jonghyeok Won
Electronics
Advancements in PLL and VCO Technologies
article

A 28/56 Gb/s NRZ/PAM-4 Dual-Mode Transmitter with Eye-Opening Enhancement in 28 nm CMOS

Jintae Kim, Jonghyeok Won
article en

Abstract

This paper presents a non-return-to-zero (NRZ)/4-level pulse amplitude modulation (PAM-4) dual-mode wireline transmitter with an eye-opening enhancement technique to improve horizontal eye-opening. With the eye-enhancement pulse generator and the auxiliary pull-up device in the tail-less current-mode driver, the worst-case horizontal eye-opening increased by 30% in the PAM-4 eye diagram. The power efficiency of the NRZ mode was also improved by completely turning off the LSB path in the differential data path, resulting in only a 31% power efficiency degradation, which is far lower than that of the prior dual-mode transmitters. Fabricated in 28 nm CMOS, the transmitter achieves power efficiency of 1.4 pJ/bit at 56 Gb/s in PAM-4 mode and 1.84 pJ/bit at 28 Gb/s in NRZ mode, respectively.

ElectronicsVol. 13(18)
Konkuk University (KR)
National Research Foundation, National Research Foundation of Korea, Ministry of Science and ICT, South Korea, Institute for Information and Communications Technology Promotion
Openalex Percentile: Top 87%
Advancements in PLL and VCO Technologies
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