Oxygen-Plasma-Treated Al/TaOX/Al Resistive Memory for Enhanced Synaptic Characteristics
In this study, we investigate the impact of O<sub>2</sub> plasma treatment on the performance of Al/TaO<sub>X</sub>/Al-based resistive random-access memory (RRAM) devices, focusing on applications in neuromorphic systems. Comparative analysis using scanning electron microscopy and X-ray photoelectron spectroscopy confirmed the differences in chemical composition between O<sub>2</sub>-plasma-treated and untreated RRAM cells. Direct-current measurements showed that O<sub>2</sub>-plasma-treated RRAM cells exhibited significant improvements over untreated RRAM cells, including higher on/off ratios, improved uniformity and distribution, longer retention times, and enhanced durability. The conduction mechanism is investigated by current-voltage (I-V) curve fitting. In addition, paired-pulse facilitation (PPF) is observed using partial short-term memory. Furthermore, 3- and 4-bit weight tuning with auto-pulse-tuning algorithms was achieved to improve the controllability of the synapse weight for the neuromorphic system, maintaining retention times exceeding 10<sup>3</sup> s in the multiple states. Neuromorphic simulation with an MNIST dataset is conducted to evaluate the synaptic device.
Authors
- Seoyoung Park
- Gyeongpyo Kim (ORCID: https://orcid.org/0009-0001-2177-6997)
- Minsuk Koo (ORCID: https://orcid.org/0000-0003-2522-6754)
- Sungjun Kim (ORCID: https://orcid.org/0000-0002-9873-2474)
Institutions
- University of Seoul (KR)
- Dongguk University (KR)
Publication Details
- Journal
- Biomimetics
- Published
- 2024-09-23
- DOI
- https://doi.org/10.3390/biomimetics9090578
- Citations
- 5
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 1.04
Funders
- National Research Foundation
- National Research Foundation of Korea
- Ministry of Science and ICT, South Korea