A 0.5V, 5.7ppm/°C Voltage Reference with Subthreshold MOSFET and Piecewise Compensation
This paper introduces a new voltage reference design using subthreshold MOSFETs and a piecewise temperature compensation technique. The design addresses the challenges of high area and power consumption in traditional bandgap references (BGRs). By leveraging the negative temperature coefficient of subthreshold MOSFETs, the proposed architecture achieves a stable voltage reference with a low temperature coefficient of 5.7 ppm over the temperature range of −40°C to 125°C and power supply ripple rejection of −77dB. The design operates accurately within a supply range of 0.8V to 1.8V and achieves line regulation of 0.29%.
Authors
- Bryce Gadogbe (ORCID: https://orcid.org/0009-0004-9930-0894)
- Patricia Tutuani
- Emmanuel Amankrah
- R.L. Geiger
Institutions
- Iowa State University (US)
Publication Details
- Published
- 2024-08-11
- DOI
- https://doi.org/10.1109/mwscas60917.2024.10658740
- Citations
- 7
- Primary Topic
- Analog and Mixed-Signal Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 1.29
Funders
- Semiconductor Research Corporation