Enhancing Neuromorphic Computing: A High-Speed, Low-Power Integrate-and-Fire Neuron Circuit Utilizing Nanoscale Side-Contacted Field Effect Diode Technology

Addressing power efficiency and performance in neuromorphic computing systems is crucial, particularly in minimizing the power usage of neuronal circuits without compromising their ability to rapidly generate spikes. To this end, we introduce the Nanoscale Side-contacted Field Effect Diode (S-FED), a promising solution for reducing power consumption and improving circuit speed, thereby facilitating the implementation of neuron circuits. This paper presents a novel integrate-and-fire (IF) neuron model that harnesses the capabilities of the S-FED. Our model lowers power usage to approximately 44 nW and reduces the energy per spike to 0.964 fJ, setting a new benchmark below current state-of-the-art neuron circuits. Additionally, our model's spiking frequency reaches 20 MHz, surpassing those of the existing neuronal circuits. Finally, we compare the performance of the proposed IF neuron circuit against the forefront of neuron circuit design.

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Publication Details

Published
2024-08-11
DOI
https://doi.org/10.1109/mwscas60917.2024.10658951
Citations
2
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.42
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article

Enhancing Neuromorphic Computing: A High-Speed, Low-Power Integrate-and-Fire Neuron Circuit Utilizing Nanoscale Side-Contacted Field Effect Diode Technology

Seyedmohamadjavad Motaman, Sarah Safura Sharifi, Yaser Michael Banad
2 citations
Advanced Memory and Neural Computing
0.42
article

Enhancing Neuromorphic Computing: A High-Speed, Low-Power Integrate-and-Fire Neuron Circuit Utilizing Nanoscale Side-Contacted Field Effect Diode Technology

Seyedmohamadjavad Motaman, Sarah Safura Sharifi, Yaser Michael Banad
article en
2 citations

Abstract

Addressing power efficiency and performance in neuromorphic computing systems is crucial, particularly in minimizing the power usage of neuronal circuits without compromising their ability to rapidly generate spikes. To this end, we introduce the Nanoscale Side-contacted Field Effect Diode (S-FED), a promising solution for reducing power consumption and improving circuit speed, thereby facilitating the implementation of neuron circuits. This paper presents a novel integrate-and-fire (IF) neuron model that harnesses the capabilities of the S-FED. Our model lowers power usage to approximately 44 nW and reduces the energy per spike to 0.964 fJ, setting a new benchmark below current state-of-the-art neuron circuits. Additionally, our model's spiking frequency reaches 20 MHz, surpassing those of the existing neuronal circuits. Finally, we compare the performance of the proposed IF neuron circuit against the forefront of neuron circuit design.

University of Oklahoma (US)
Affordable and clean energy
Openalex Percentile: Top 38%
Advanced Memory and Neural Computing
0.42
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