Analysis of conductive filament heat transfer in TiO₂-based RRAM device

Abstract Resistive random access memory (RRAM) has developed into a new type of non-volatile memory that has attracted much attention for its high density and low power; TiO 2 has been studied to make RRAM because of its high conductivity. Based on the COMSOL Multiphysics finite element method and domain decomposition method, an electrically-thermally coupled model of TiO 2 -based RRAM with oxygen vacancy (Vo) conduction mechanism is constructed, the formation and cutting process of RESET and SET conductive filament (CF) under different voltages is simulated. Moreover, the characteristics of the internal temperature distribution of the CF are explored. The results show that the RESET process is more sensitive to heat changes, the transverse direction thermal value of the CF is more obvious than the longitudinal direction, and the rate of change is faster. Additionally, the electric field induces the migration of the Vo in filament, which affects the enthalpy change of the device’s heat transfer and resistive properties. This is an important reference for a deeper understanding of the switching behavior of RRAM devices and the control mechanisms for thermal studies.