Characterization of Trap States in AlGaN/GaN MIS-High-Electron-Mobility Transistors under Semi-on-State Stress
Devices under semi-on-state stress often suffer from more severe current collapse than when they are in the off-state, which causes an increase in dynamic on-resistance. Therefore, characterization of the trap states is necessary. In this study, temperature-dependent transient recovery current analysis determined a trap energy level of 0.08 eV under semi-on-state stress, implying that interface traps are responsible for current collapse. Multi-frequency capacitance-voltage (C-V) testing was performed on the MIS diode, calculating that interface trap density is in the range of 1.37×1013 to 6.07×1012cm-2eV-1 from EC-ET=0.29 eV to 0.45 eV.
Authors
- Ye Liang (ORCID: https://orcid.org/0000-0001-7754-6034)
- Jie Zhang (ORCID: https://orcid.org/0000-0003-4434-5177)
- Kain Lu Low (ORCID: https://orcid.org/0000-0002-3999-7261)
- Jia-Chen Duan (ORCID: https://orcid.org/0009-0004-9626-6256)
- Wen Liu (ORCID: https://orcid.org/0000-0002-2212-1861)
- Ping Zhang (ORCID: https://orcid.org/0009-0000-8827-9867)
Institutions
- University of Liverpool (GB)
- Xi’an Jiaotong-Liverpool University (CN)
Publication Details
- Journal
- Nanomaterials
- Published
- 2024-09-20
- DOI
- https://doi.org/10.3390/nano14181529
- Citations
- 4
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.24
Funders
- Association of Medical Research Charities
- Xi’an Jiaotong-Liverpool University
- Division of Materials Research