Investigation of high field breakdown characteristics in CNTFETs

Abstract The enhancement of stability in carbon nanotube field effect transistors (CNTFETs) is crucial for mitigating high field failures, thereby influencing device reliability through modifications in channel dimensions (W and L), as well as the incorporation of dielectric layers and gate metals during fabrication. The present study demonstrates the correlation between device withstand voltage and channel size, as well as the impact of gate oxide layer and gate metal introduction on device reliability. The findings reveal that both the breakdown voltage and breakdown current of the device are influenced by W, while only the breakdown voltage is affected by L. Furthermore, a gradual decrease in device robustness is observed with continuous integration of the dielectric layer and gate metal. The increase in device index simultaneously leads to an effective augmentation of the device failure current. These results provide valuable insights and guidance for optimizing the structural design of devices.