Multipeak ultraviolet lasing based on F-P mode from in-situ ZnO nanowire

Abstract High-quality ultraviolet singlemode and multimode lasing from zinc oxide nanowires are highly desirable. In this paper, we achieve high-Q lasing oscillation in vertically grown Zinc oxide (ZnO) microwires. The broad gain range reaches 13 lasing modes under high-energy excitation. We observe multiple peak emissions from the Fabry-Perot (F-P) lasing mode. In contrast, nanorod arrays with low aspect ratios exhibit amplified spontaneous emission (ASE) due to significant diffraction losses. Our work demonstrates that high-quality ZnO nanowires with an appropriate aspect ratio realize high-Q ultraviolet multipeak lasing based on F-P mode. These findings will benefit the design and fabrication of nanolasers based on nanowires.

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Publication Details

Journal
Journal of Physics Conference Series
Published
2024-09-01
DOI
https://doi.org/10.1088/1742-6596/2842/1/012054
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
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article

Multipeak ultraviolet lasing based on F-P mode from in-situ ZnO nanowire

Ruibin Liu, Ying Zhang
Journal of Physics Conference Series
GaN-based semiconductor devices and materials
article

Multipeak ultraviolet lasing based on F-P mode from in-situ ZnO nanowire

Ruibin Liu, Ying Zhang
article en

Abstract

Abstract High-quality ultraviolet singlemode and multimode lasing from zinc oxide nanowires are highly desirable. In this paper, we achieve high-Q lasing oscillation in vertically grown Zinc oxide (ZnO) microwires. The broad gain range reaches 13 lasing modes under high-energy excitation. We observe multiple peak emissions from the Fabry-Perot (F-P) lasing mode. In contrast, nanorod arrays with low aspect ratios exhibit amplified spontaneous emission (ASE) due to significant diffraction losses. Our work demonstrates that high-quality ZnO nanowires with an appropriate aspect ratio realize high-Q ultraviolet multipeak lasing based on F-P mode. These findings will benefit the design and fabrication of nanolasers based on nanowires.

Journal of Physics Conference SeriesVol. 2842(1)
Beijing Institute of Technology (CN)
Openalex Percentile: Top 91%
GaN-based semiconductor devices and materials
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Multipeak ultraviolet lasing based on F-P mode from in-situ ZnO nanowire — Ruibin Liu, Ying Zhang · Journal of Physics Conference Series (2024) | TGRS Research Map | TGRS