Ultrathin and Conformal Depletion Layer of Core/Shell Heterojunction Enables Efficient and Stable Acidic Water Oxidation
Ru-based electrocatalysts hold great promise for developing affordable proton exchange membrane (PEM) electrolyzers. However, the harsh acidic oxidative environment of the acidic oxygen evolution reaction (OER) often causes undesirable overoxidation of Ru active sites and subsequent serious activity loss. Here, we present an ultrathin and conformal depletion layer attached to the Schottky heterojunction of core/shell RuCo/RuCoO<sub><i>x</i></sub> that not only maximizes the availability of active sites but also improves its durability and intrinsic activity for acidic OER. Operando synchrotron characterizations combined with theoretical calculations elucidate that the lattice strain and charge transfer induced by Schottky heterojunction substantially regulate the electronic structures of active sites, which modulates the OER pathway and suppresses the overoxidation of Ru species. Significantly, the closed core/shell architecture of the RuCo/RuCoO<sub><i>x</i></sub> ensures the structure integrity of the Schottky heterojunction under acidic OER conditions. As a result, the core/shell RuCo/RuCoO<sub><i>x</i></sub> Schottky heterojunction exhibits an unprecedented durability up to 250 0 h at 10 mA cm<sup>-2</sup> with an ultralow overpotential of ∼170 mV at 10 mA cm<sup>-2</sup> in 0.5 M H<sub>2</sub>SO<sub>4</sub>. The RuCo/RuCoO<sub><i>x</i></sub> catalyst also demonstrates superior durability in a proton exchange membrane (PEM) electrolyzer, showcasing the potential for practical applications.
Authors
- Xiaoke Xi (ORCID: https://orcid.org/0009-0005-0411-9775)
- Jianghua Wu (ORCID: https://orcid.org/0000-0001-7087-6305)
- Haeseong Jang (ORCID: https://orcid.org/0000-0002-1301-8627)
- Shuhong Jiao (ORCID: https://orcid.org/0000-0003-0860-4151)
- Donglai Zhou (ORCID: https://orcid.org/0000-0003-1884-4749)
- Yu Deng (ORCID: https://orcid.org/0000-0002-1639-6367)
- Ruiguo Cao (ORCID: https://orcid.org/0000-0002-3177-3917)
- Wensheng Yan (ORCID: https://orcid.org/0000-0001-6297-4589)
- Wanxia Li
- Feng Zhu (ORCID: https://orcid.org/0000-0002-4966-3943)
- Meng Gu (ORCID: https://orcid.org/0000-0002-5126-9611)
- Yuchen Zhang (ORCID: https://orcid.org/0000-0002-4628-557X)
- Min Gyu Kim (ORCID: https://orcid.org/0000-0002-2366-6898)
- Jun Jiang (ORCID: https://orcid.org/0000-0002-6116-5605)
- Zhanwu Lei
- Huirong Li (ORCID: https://orcid.org/0000-0002-2675-931X)
- Yan Huang (ORCID: https://orcid.org/0000-0003-2512-2509)
- Duojie Wu (ORCID: https://orcid.org/0009-0004-8508-4246)
- Yang Liu (ORCID: https://orcid.org/0000-0002-7240-1546)
Institutions
- Pohang University of Science and Technology (KR)
- University of Science and Technology of China (CN)
- City University of Hong Kong (HK)
- Hefei National Center for Physical Sciences at Nanoscale (CN)
- City University of Hong Kong, Shenzhen Research Institute (CN)
- Collaborative Innovation Center of Advanced Microstructures (CN)
- National Synchrotron Radiation Laboratory (CN)
- Pohang Accelerator Laboratory
- Eastern Institute of Technology, Ningbo
- Chung-Ang University (KR)
- Nanjing University (CN)
Publication Details
- Journal
- Journal of the American Chemical Society
- Published
- 2024-09-23
- DOI
- https://doi.org/10.1021/jacs.4c07995
- Citations
- 69
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 14.40
Funders
- National Natural Science Foundation of China
- Chinese Academy of Sciences
- National Key Research and Development Program of China