Broadband Erbium Doped Aluminium Oxide Waveguide Amplifier in Thin Film Lithium Niobate
This work reports an erbium doped <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{Al}_{2}\mathrm{O}_{3}$</tex> waveguide amplifier in the thin film lithium niobate platform. It achieves an internal net gain of 23.9 dB, with exceeding 10 dB gain covering the wavelength ranging from 1520 nm to 1560 nm. © 2024 The Author(s).
Authors
- Xifa Liang
- Renfei Kuang
- Qingming Chen (ORCID: https://orcid.org/0000-0003-1120-0545)
- Ling Luo
Institutions
- Sun Yat-sen University (CN)
Publication Details
- Published
- 2024-08-04
- DOI
- https://doi.org/10.1109/cleo-pr60912.2024.10676748
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00