Experimental and Numerical Evaluation of High Power Fabry-Perot Semiconductor Lasers with Considerations of Thermal Effects
We demonstrated a high power Fabry-Perot semiconductor laser with a close-to-100mW optical output at 1550nm band. A thermal model was numerically applied to extract the thermal impedance of this device.
Authors
- Yuxiang Chen (ORCID: https://orcid.org/0000-0003-0250-8425)
- Bo-Ming Huang
- Chien-Yu Lu
- Chung-Chen Cheng
- Chien‐Chung Lin (ORCID: https://orcid.org/0000-0001-8656-1922)
Institutions
- National Taiwan University (TW)
Publication Details
- Published
- 2024-08-04
- DOI
- https://doi.org/10.1109/cleo-pr60912.2024.10676572
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00