Atomic Scale Photomemristors Engineered by Ion Implantation

We demonstrated atomic scale photomemristors engineered by ion implantation for an array of Si and Ag nanowire crossbars.

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Published
2024-08-04
DOI
https://doi.org/10.1109/cleo-pr60912.2024.10676924
Primary Topic
Advanced Memory and Neural Computing
Type
article
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article

Atomic Scale Photomemristors Engineered by Ion Implantation

Seyed Saleh Mousavi Khaleghi, Zhijuan Su, Yaping Dan, Jinbin Yang
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Advanced Memory and Neural Computing
article

Atomic Scale Photomemristors Engineered by Ion Implantation

Seyed Saleh Mousavi Khaleghi, Zhijuan Su, Yaping Dan, Jinbin Yang
article en

Abstract

We demonstrated atomic scale photomemristors engineered by ion implantation for an array of Si and Ag nanowire crossbars.

Shanghai Jiao Tong University (CN)
Affordable and clean energy
Openalex Percentile: Top 87%
Advanced Memory and Neural Computing
DOISourceOpenAlex
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Atomic Scale Photomemristors Engineered by Ion Implantation — Seyed Saleh Mousavi Khaleghi, Zhijuan Su, et al. · (2024) | TGRS Research Map | TGRS