GaN-based Photonic-Crystal Surface-Emitting Lasers Made from Edge-Emitting Laser Structure

Blue-violet lasing emissions were achieved for GaN-based photonic-crystal (PC) surface-emitting lasers (SELs). Square-latticed and circular-shaped PCs were patterned and etched through p-type AlGaN cladding layer of the ready-made edge-emitting laser structure. Even without distributed Bragg reflector, our pumping threshold was among the best results of optically pumped GaN-based PC-SELs. The lasing wavelength red-shifted with temperature at a rate of 0.02 nm/K, showing cavity-dominated lasing distinguished from typical edge emitters.

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Publication Details

Published
2024-08-04
DOI
https://doi.org/10.1109/cleo-pr60912.2024.10676536
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
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article

GaN-based Photonic-Crystal Surface-Emitting Lasers Made from Edge-Emitting Laser Structure

Gray Lin, Wen-Chia Hsieh, Edwin Tsai
Semiconductor Lasers and Optical Devices
article

GaN-based Photonic-Crystal Surface-Emitting Lasers Made from Edge-Emitting Laser Structure

Gray Lin, Wen-Chia Hsieh, Edwin Tsai
article en

Abstract

Blue-violet lasing emissions were achieved for GaN-based photonic-crystal (PC) surface-emitting lasers (SELs). Square-latticed and circular-shaped PCs were patterned and etched through p-type AlGaN cladding layer of the ready-made edge-emitting laser structure. Even without distributed Bragg reflector, our pumping threshold was among the best results of optically pumped GaN-based PC-SELs. The lasing wavelength red-shifted with temperature at a rate of 0.02 nm/K, showing cavity-dominated lasing distinguished from typical edge emitters.

National Yang Ming Chiao Tung University (TW)
Openalex Percentile: Top 87%
Semiconductor Lasers and Optical Devices
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