2D Semiconducting Devices with Atomically Clean Metal Contacts
This work demonstrates a novel fabrication process for MoS2 devices, utilizing metal as a mask to protect the 2D material from contamination by organic photoresist, and fabricated MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> devices with atomically clean metal contacts. © 2024 Yumeng Liu, Yizhuo Wang, Yaping Dan.
Authors
- Yaping Dan (ORCID: https://orcid.org/0000-0002-2983-7213)
- Yumeng Liu (ORCID: https://orcid.org/0000-0003-2198-0653)
- Yizhuo Wang
Institutions
- Shanghai Jiao Tong University (CN)
Publication Details
- Published
- 2024-08-04
- DOI
- https://doi.org/10.1109/cleo-pr60912.2024.10676631
- Primary Topic
- Electronic and Structural Properties of Oxides
- Type
- article
- Field-Weighted Citation Impact
- 0.00