$\text{MoS}_{2}/\text{Si}$ Heterojunction Device Stacked Utilizing an All-Transfer-Printing Method
The all-transfer-printing processes are utilized to realize photodetectors composed of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{MoS}_{2}/\text{Si}$</tex> heterojunction. Compared to traditional photolithography process, this proposed method can avoid photoresist residue and organic solvent. As a result, the photoresponsivity increases ∼ 30 times.
Authors
- Shih‐Yen Lin (ORCID: https://orcid.org/0000-0001-7028-481X)
- Po-Tsung Lee (ORCID: https://orcid.org/0000-0003-4116-3781)
- Pin-Ruei Huang (ORCID: https://orcid.org/0000-0001-8067-3309)
- Yi-Chieh Huang
- Tsan-Wen Lu (ORCID: https://orcid.org/0000-0003-4108-1815)
- Po‐Cheng Kuo
- Bo-Yan Chen
Institutions
- National Yang Ming Chiao Tung University (TW)
- Research Center for Applied Science, Academia Sinica (TW)
Publication Details
- Published
- 2024-08-04
- DOI
- https://doi.org/10.1109/cleo-pr60912.2024.10676760
- Primary Topic
- Semiconductor materials and interfaces
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Academia Sinica