Sub-Bandgap Si-Schottky Photodetectors with Cavity-Enhanced Pyramidal Absorbers

Schottky short-wavelength infrared photodetectors based on an AlSiTi-TiN-Si interface with pyramidal photonic nanostructure for reduced reflection and a decreased absorbing layer for improved internal quantum efficiency are discussed regarding spectral responsivity and dark current behaviour.

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Publication Details

Published
2024-08-04
DOI
https://doi.org/10.1109/cleo-pr60912.2024.10676694
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
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article

Sub-Bandgap Si-Schottky Photodetectors with Cavity-Enhanced Pyramidal Absorbers

Lion Augel, J. Knobbe
Semiconductor Quantum Structures and Devices
article

Sub-Bandgap Si-Schottky Photodetectors with Cavity-Enhanced Pyramidal Absorbers

Lion Augel, J. Knobbe
article en

Abstract

Schottky short-wavelength infrared photodetectors based on an AlSiTi-TiN-Si interface with pyramidal photonic nanostructure for reduced reflection and a decreased absorbing layer for improved internal quantum efficiency are discussed regarding spectral responsivity and dark current behaviour.

Fraunhofer Institute for Photonic Microsystems (DE), Brandenburg University of Technology Cottbus-Senftenberg (DE)
Affordable and clean energy
Openalex Percentile: Top 86%
Semiconductor Quantum Structures and Devices
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Sub-Bandgap Si-Schottky Photodetectors with Cavity-Enhanced Pyramidal Absorbers — Lion Augel, J. Knobbe · (2024) | TGRS Research Map | TGRS