Ultra-Low Power Stress-Optic Phase-Shifters in 400 nm Silicon Nitride Platform Using Thin Film Sputtered-PZT

We present an ultra-low power tunable silicon nitride-based MZI using stress-optic effect induced by thin film PZT of thickness 450 nm with a power consumption in nW level and tunable coefficient of 4 pm/V.

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Published
2024-08-04
DOI
https://doi.org/10.1109/cleo-pr60912.2024.10676878
Primary Topic
Photonic and Optical Devices
Type
article
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article

Ultra-Low Power Stress-Optic Phase-Shifters in 400 nm Silicon Nitride Platform Using Thin Film Sputtered-PZT

Priyavarthini Venkatachalam, Shankar Kumar Selvaraja, Rakshitha Kallega, Daniel Yumnam et al.
Photonic and Optical Devices
article

Ultra-Low Power Stress-Optic Phase-Shifters in 400 nm Silicon Nitride Platform Using Thin Film Sputtered-PZT

Priyavarthini Venkatachalam, Shankar Kumar Selvaraja, Rakshitha Kallega, Daniel Yumnam, Vishnu Kumar
article en

Abstract

We present an ultra-low power tunable silicon nitride-based MZI using stress-optic effect induced by thin film PZT of thickness 450 nm with a power consumption in nW level and tunable coefficient of 4 pm/V.

Vol. 8
Indian Institute of Science Bangalore (IN)
Affordable and clean energy
Openalex Percentile: Top 87%
Photonic and Optical Devices
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Ultra-Low Power Stress-Optic Phase-Shifters in 400 nm Silicon Nitride Platform Using Thin Film Sputtered-PZT — Priyavarthini Venkatachalam, Shankar Kumar Selvaraja, et al. · (2024) | TGRS Research Map | TGRS