Ultralow-Loss Silicon Nitride Microresonators Using Room-Temperature Sputtering

Ultralow-loss silicon nitride on insulator films with high thickness are demonstrated with room temperature reactive sputtering. Microring resonators fabricated with said films reach optical Q-factors above 10 million after 800 °C thermal annealing. © 2024 The Author(s)

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Publication Details

Published
2024-08-04
DOI
https://doi.org/10.1109/cleo-pr60912.2024.10676445
Primary Topic
Photonic and Optical Devices
Type
article
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article

Ultralow-Loss Silicon Nitride Microresonators Using Room-Temperature Sputtering

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Photonic and Optical Devices
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Ultralow-Loss Silicon Nitride Microresonators Using Room-Temperature Sputtering

Shuangyou Zhang, Yaojing Zhang, Pascal Del’Haye, Florentina Gannott, Alexander Gumann, Eduard Butzen, Irina Harder, Toby Bi, Olga Ohletz
article en

Abstract

Ultralow-loss silicon nitride on insulator films with high thickness are demonstrated with room temperature reactive sputtering. Microring resonators fabricated with said films reach optical Q-factors above 10 million after 800 °C thermal annealing. © 2024 The Author(s)

Max Planck Institute for the Science of Light (DE)
Affordable and clean energy
Openalex Percentile: Top 87%
Photonic and Optical Devices
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