Nanoscale Phase Change of Cr2Ge2Te6 Thin Films Induced by Terahertz Near-Fields
To elucidate nanoscale properties of memory operation in phase-change material Cr2Ge2Te6, we employed the terahertz (THz) scanning tunnelling microscope and investigated the nanoscale phase change. Nanoscale phase-change structures are successfully created by the THz irradiation. © 2024 The Author(s).
Authors
- Yinli Wang (ORCID: https://orcid.org/0000-0003-2129-1225)
- Yi Shuang (ORCID: https://orcid.org/0000-0001-8768-1432)
- Ikufumi Katayama (ORCID: https://orcid.org/0000-0001-6788-7732)
- Jun Takeda (ORCID: https://orcid.org/0000-0002-1197-6821)
- Satoshi Kusaba (ORCID: https://orcid.org/0000-0002-5313-4817)
- Yuji Sutou (ORCID: https://orcid.org/0000-0002-3067-2727)
- Dang-il Kim
- Ryo Tamaki (ORCID: https://orcid.org/0000-0003-3687-7245)
- Mizuki Kawaji
Institutions
- Yokohama National University (JP)
- Tohoku University (JP)
- Advanced Institute of Materials Science (JP)
Publication Details
- Published
- 2024-08-04
- DOI
- https://doi.org/10.1109/cleo-pr60912.2024.10676684
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 0.00