Impact of Optical Loss on the Ground-State Power Quenching in Dual-State Lasing Epitaxial Quantum Dot Lasers on Silicon
We find that high optical loss leads to quenching of the ground-state power above the ES lasing threshold after introducing the Boltzmann distribution in the dual-state carrier distribution of quantum dot lasers.
Authors
- Zihan He (ORCID: https://orcid.org/0000-0002-8425-4002)
- Feng He (ORCID: https://orcid.org/0000-0003-4336-1204)
- Jianan Duan (ORCID: https://orcid.org/0000-0001-7710-4287)
- Xiao‐Chuan Xu (ORCID: https://orcid.org/0000-0002-1995-327X)
- Yong Yao (ORCID: https://orcid.org/0000-0003-4229-955X)
- Zhiyong Jin (ORCID: https://orcid.org/0000-0002-1272-8870)
- Qi Chu (ORCID: https://orcid.org/0009-0006-6328-1841)
Institutions
- Harbin Institute of Technology (CN)
Publication Details
- Published
- 2024-08-04
- DOI
- https://doi.org/10.1109/cleo-pr60912.2024.10676565
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00