Elliptical-Apertured 850-nm VCSEL Enabling Reduced RMS Linewidth and Enhanced Output Power

This paper introduces the advantages of elliptical-apertured 850-nm Vertical-Cavity Surface-Emitting Laser (VCSEL) in terms of the output light power and Root-Mean-Square (RMS) linewidth. We thoroughly test its characteristics and compare the results to circular aperture VCSEL.

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Publication Details

Published
2024-08-04
DOI
https://doi.org/10.1109/cleo-pr60912.2024.10676605
Citations
1
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
0.21
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article

Elliptical-Apertured 850-nm VCSEL Enabling Reduced RMS Linewidth and Enhanced Output Power

Jun-Zhang Chen, Chao‐Hsin Wu, Yun-Cheng Yang, Ting-Yu Wu
1 citations
Semiconductor Lasers and Optical Devices
0.21
article

Elliptical-Apertured 850-nm VCSEL Enabling Reduced RMS Linewidth and Enhanced Output Power

Jun-Zhang Chen, Chao‐Hsin Wu, Yun-Cheng Yang, Ting-Yu Wu
article en
1 citations

Abstract

This paper introduces the advantages of elliptical-apertured 850-nm Vertical-Cavity Surface-Emitting Laser (VCSEL) in terms of the output light power and Root-Mean-Square (RMS) linewidth. We thoroughly test its characteristics and compare the results to circular aperture VCSEL.

National Taiwan University (TW)
Affordable and clean energy
Openalex Percentile: Top 48%
Semiconductor Lasers and Optical Devices
0.21
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Elliptical-Apertured 850-nm VCSEL Enabling Reduced RMS Linewidth and Enhanced Output Power — Jun-Zhang Chen, Chao‐Hsin Wu, et al. · (2024) | TGRS Research Map | TGRS