Probing Physical Parameters of Low-Dimensional Semiconductor Devices by Analytical Photoresponse Theory

Minority carrier recombination lifetimes are difficult to characterize, in particular in low-dimensional semiconductor devices. In this work, we probe the minority recombination lifetimes in silicon nanowires by our recently established analytical photoresponse theory. ©2024 Kai Li Yaping Dan.

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Published
2024-08-04
DOI
https://doi.org/10.1109/cleo-pr60912.2024.10676428
Primary Topic
Advanced Semiconductor Detectors and Materials
Type
article
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article

Probing Physical Parameters of Low-Dimensional Semiconductor Devices by Analytical Photoresponse Theory

Yaping Dan, Kai Li
Advanced Semiconductor Detectors and Materials
article

Probing Physical Parameters of Low-Dimensional Semiconductor Devices by Analytical Photoresponse Theory

Yaping Dan, Kai Li
article en

Abstract

Minority carrier recombination lifetimes are difficult to characterize, in particular in low-dimensional semiconductor devices. In this work, we probe the minority recombination lifetimes in silicon nanowires by our recently established analytical photoresponse theory. ©2024 Kai Li Yaping Dan.

Vol. 8
Shanghai Jiao Tong University (CN)
Affordable and clean energy
Openalex Percentile: Top 87%
Advanced Semiconductor Detectors and Materials
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Probing Physical Parameters of Low-Dimensional Semiconductor Devices by Analytical Photoresponse Theory — Yaping Dan, Kai Li · (2024) | TGRS Research Map | TGRS