Erbium-Ytterbium Co-doped Tantalum Pentoxide as a Gain Material for Silicon-based Optoelectronics
We demonstrate an Erbium-Ytterbium (Er-Yb) co-doped tantalum pentoxide (Ta<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</inf>) gain material for integrated waveguide amplifiers and lasers. Luminescence properties of the film were characterized, and optical waveguides were fabricated by CMOS-compatible lift-off process.
Authors
- Zhiping Zhou (ORCID: https://orcid.org/0000-0001-9340-217X)
- Xiwen He (ORCID: https://orcid.org/0009-0001-0628-5559)
- Zheng Zhang (ORCID: https://orcid.org/0009-0006-9558-6535)
- Weibiao Chen
- Rongping Wang (ORCID: https://orcid.org/0000-0002-4426-824X)
Institutions
- Ningbo University (CN)
- Chinese Academy of Sciences (CN)
- Shanghai Institute of Optics and Fine Mechanics (CN)
Publication Details
- Published
- 2024-08-04
- DOI
- https://doi.org/10.1109/cleo-pr60912.2024.10676930
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00