Fast ${\text{MoS}_{2}}$ Photodetector with Ultralow Contact Resistance
We demonstrate a fast MoS2 photodetector with ultralow contact resistance (<1000 Ω) by using bismuth electrodes. The device exhibits a rise time of 10.5 μs, which is one of the highest among similar devices.
Authors
- Fengqiu Wang (ORCID: https://orcid.org/0000-0001-9823-5788)
- Anran Wang (ORCID: https://orcid.org/0000-0002-3237-7078)
- Chen Hu (ORCID: https://orcid.org/0000-0002-5058-2614)
- Wangheng Pan (ORCID: https://orcid.org/0009-0000-1688-3395)
Institutions
- Nanjing University (CN)
Publication Details
- Published
- 2024-08-04
- DOI
- https://doi.org/10.1109/cleo-pr60912.2024.10676788
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.00